Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers

IEEE Photonics Technology Letters

Volumn 9, Issue 3, 1997, Pages 274-276

  Kim, Tae Geun ^a   Hwang, Sung Min ^a   Kim, Eun Kyu ^a   Min, Suk Ki ^a   Jeon, Jong Il ^b   Leem, Si Jong ^b   Jeong, Jichai ^b   Park, Jung Ho ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

MOCVD; p n junction isolation; Two step growth with a wet etching technique; V grooved inner stripe quantum wire laser

Indexed keywords

CURRENT DENSITY; ETCHING; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WIRES;

CHEMICAL WET ETCHING TECHNIQUE; CURRENT CONFINEMENT EFFECT; QUANTUM WIRE LASERS;

SEMICONDUCTOR LASERS;

EID: 0031104012     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.556044     Document Type: Article

References (11)

1. P. S. Zory, Quantum Well Lasers. New York: Academic, 1995, pp. 462-463.
2. S. Tiwari, G. D. Pettit, K. R. Milkove, F. Legoues, R. J. Davis, and J. M. Woodall, "High efficiency and low threshold current strained V-groove quantum-wire lasers," Appl. Phys. Lett., vol. 64, pp. 3536-3538, 1994.
3. T. S. Ohtoshi, K. Yamaguchi, and N. Chinone, "Analysis of current leakage in GaAsP/InP buried heterostructure lasers," IEEE J. Quantum Electron., vol. 25, pp. 1369-1375, 1989.
4. S. Simhony, E. Kapon, E. Colas, D. M. Hwang, N. G. Stoffel, and P. Worland, "Vertically stacked multiple quantum wire semiconductor diode lasers," Appl. Phys. Lett., vol. 59, pp. 2225-2257, 1991.
5. Y. Qian, J. T. Xu, J. M. Zhang, L. H. Chen, Q. M. Wang, L. X. Zneng, and X. W. Hu, "High-power two-dimensional quantum wire laser arrays," Electron. Lett., vol. 31, pp. 102-104, 1995.
6. T. G. Kim, K. H. Park, E. K. Kim, S. K. Min, and J. H. Park, "A short-period GaAs/AlGaAs quantum wire array laser with a submicrometer current blocking layer," IEEE Photon. Technol. Lett., to be published.
7. S. D. Hersee, E. Barbier, and R. Blondeau, "A study of the orientation dependence of GaAlAs growth by MOVPE," J. Cryst. Growth, vol. 77, pp. 310-320, 1986.
8. Gerold, W. Neudeck, and R. F. Pierret, The Bipolar Junction Transistor, Modular Series on Solid State Devices. Reading, MA: Addison-Wesley, 1989, p. 44.
9. Y. Hasegawa, T. Egawa, T. Jimbo, and M. Umeno, "Vertically-stacked GaAs quantum wires grown on Si substrates by metalorganic chemical vapor deposition," J. Cryst. Growth, vol. 145, pp. 728-733, 1994.
10. E. Kapon, D. M. Hwang, and R. Bhat, "Stimulated emission in semiconductor quantum wire heteronstructures," Phys. Rev. Lett., vol. 63, pp. 430-433, 1989.
11. T. Nakino, "Analytical fomulas for the optical gain of quantum well," IEEE J. Quantum Electron, vol. 32, pp. 493-501, 1996.