Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 A, 1998, Pages 4870-4871

  Chen, Wei Kuo ^a   Lin, Heng Ching ^a   Pan, Yung Chung ^a   Ou, Jehn ^a   Shu, Chen Ke ^a   Chen, Wen Hsiung ^a   Lee, Ming Chih ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

InN; MOVPE; Raman scattering; X ray

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DEFECTS; INDIUM NITRIDE FILMS; SOFTENING EVOLUTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032155028     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4870     Document Type: Article

References (8)

1. H. J. Kwon, Y. H. Lee, O. Miki, H. Yamano and A. Yoshida: Appl. Phys. Lett. 69 (1996) 937.
2. K. Osamura, S. Naka and Y. Murakami: J. Appl. Phys. 46 (1975) 3432.
3. W. K. Chen, Y. C. Pan, H. C. Lin, J. Ou, W. H. Chen and M. C. Lee: Jpn. J. Appl. Phys. 36 (1997) L1625.
4. H. C. Lin, J. Ou, W. K. Chen, W. H. Chen and M. C. Lee: Jpn. J. Appl. Phys. 36 (1997) L598.
5. M. H. Brodsky: Light Scattering in Solid I, ed. M. Cardona (Springer-Verlag, Berlin, 1982) 2nd ed., Chap. 5, p. 227.
6. H. Siegle, L. Eckey, A. Hoffmann, C. Thomsen, B. K. Meyer, D. Schikora, M. Hankeln and K. Lischka: Solid State Commun. 96 (1995) 943.
7. S. Suite, D. Chandrasekhar, D. J. Smith, J. Sariel, H. Chen and N. Teraguchi: J. Cryst. Growth 127 (1993) 204.
8. A. F. Wright: J. Appl. Phys. 82 (1997) 5259.