Dopant patterning in three dimensions during molecular beam epitaxial growth using an in-situ focused ion gun

Superlattices and Microstructures

Volumn 20, Issue 4, 1996, Pages 535-544

  Sazio, P J A ^a   Thompson, J H ^a   Jones, G A C ^a   Linfield, E H ^a   Ritchie, D A ^a   Houlton, M ^b   Smith, G W ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; MICROSTRUCTURE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS;

ION GUNS;

MOLECULAR BEAM EPITAXY;

EID: 0030380052     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0112     Document Type: Article

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