-
1
-
-
0029342430
-
Electroabsorption modulators for high-bit-rate optical communications: A comparison of strained InGaAs/InAlAs and InGaAsP/InGaAsP MQW
-
F. Devaux, S. Chelles, A. Ougazzaden, A. Mircea, and J. C. Harmand, "Electroabsorption modulators for high-bit-rate optical communications: A comparison of strained InGaAs/InAlAs and InGaAsP/InGaAsP MQW," Semicond. Sci. Technol., vol. 10, pp. 887-901, 1995.
-
(1995)
Semicond. Sci. Technol.
, vol.10
, pp. 887-901
-
-
Devaux, F.1
Chelles, S.2
Ougazzaden, A.3
Mircea, A.4
Harmand, J.C.5
-
3
-
-
0000425290
-
Strained layer quantum well heterostructure lasers
-
P. S. Zory, Ed. New York: Academic
-
J. J. Coleman, "Strained layer quantum well heterostructure lasers," in Quantum Well Lasers, P. S. Zory, Ed. New York: Academic, 1993.
-
(1993)
Quantum Well Lasers
-
-
Coleman, J.J.1
-
4
-
-
0028379806
-
Polarization-independent quantum confined Stark effect in an InGaAs/InP tensile-strained quantum well
-
and references therein
-
T. Aizawa, K. G. Ravikumar, S. Suzaki, T. Watanabe, and R. Yamauchi, "Polarization-independent quantum confined Stark effect in an InGaAs/InP tensile-strained quantum well," IEEE J. Quantum Electron., vol. 30, pp. 585-592, 1994, and references therein.
-
(1994)
IEEE J. Quantum Electron.
, vol.30
, pp. 585-592
-
-
Aizawa, T.1
Ravikumar, K.G.2
Suzaki, S.3
Watanabe, T.4
Yamauchi, R.5
-
5
-
-
36449004028
-
High performance polarization insensitive electroabsorption modulator based on strained GaInAs-AlInAs multiple quantum well
-
S. Chelles, R. Ferreira, and P. Voisin, "High performance polarization insensitive electroabsorption modulator based on strained GaInAs-AlInAs multiple quantum well," Appl. Phys. Lett., vol. 67, pp. 247-249, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 247-249
-
-
Chelles, S.1
Ferreira, R.2
Voisin, P.3
-
6
-
-
0012549379
-
Bias independent heavy-and light-hole degeneracy in InGaAs/InGaAsP quantum wells
-
H. Shen, J. Pamulapati, W. Zhou, M. Dutta, and F. G. Johnson, "Bias independent heavy-and light-hole degeneracy in InGaAs/InGaAsP quantum wells," Appl. Phys. Lett., vol. 72, pp. 683-685, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 683-685
-
-
Shen, H.1
Pamulapati, J.2
Zhou, W.3
Dutta, M.4
Johnson, F.G.5
-
7
-
-
0031257621
-
Polarization insensitive 1.55-μm optical amplifier with GaAs δ-strained GaInAs quantum wells
-
Oct.
-
F. Seiferth, F. G. Johnson, S. A. Merritt, S. Fox, R. D. Whaley, Y. J. Chen, M. Dagenais, and D. R. Stone, "Polarization insensitive 1.55-μm optical amplifier with GaAs δ-strained GaInAs quantum wells," IEEE Photon. Technol. Lett., vol. 9, pp. 1340-1342, Oct. 1997.
-
(1997)
IEEE Photon. Technol. Lett.
, vol.9
, pp. 1340-1342
-
-
Seiferth, F.1
Johnson, F.G.2
Merritt, S.A.3
Fox, S.4
Whaley, R.D.5
Chen, Y.J.6
Dagenais, M.7
Stone, D.R.8
-
8
-
-
0032163833
-
Polarization-independent δ-strained semiconductor optical amplifiers: A tight-binding study
-
Oct.
-
A. Di Carlo, A. Reale, L. Tocca, and P. Lugli, "Polarization-independent δ-strained semiconductor optical amplifiers: A tight-binding study," IEEE J. Quantum Electron., vol. 34, pp. 1730-1739, Oct. 1998.
-
(1998)
IEEE J. Quantum Electron.
, vol.34
, pp. 1730-1739
-
-
Di Carlo, A.1
Reale, A.2
Tocca, L.3
Lugli, P.4
-
9
-
-
33646704468
-
Variational calculations on a quantum well in an electric field
-
G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki, "Variational calculations on a quantum well in an electric field," Phys. Rev. B, vol. 28, pp. 3241-3245, 1983.
-
(1983)
Phys. Rev. B
, vol.28
, pp. 3241-3245
-
-
Bastard, G.1
Mendez, E.E.2
Chang, L.L.3
Esaki, L.4
-
10
-
-
0030167904
-
Wide-wavelength polarizationindependent optical modulator based on tensile-strained quantum well with mass-dependent width
-
June
-
M. Kato, K. Tada, and Y. Nakano, "Wide-wavelength polarizationindependent optical modulator based on tensile-strained quantum well with mass-dependent width," IEEE Photon. Technol. Lett., vol. 8, pp. 785-787, June 1996.
-
(1996)
IEEE Photon. Technol. Lett.
, vol.8
, pp. 785-787
-
-
Kato, M.1
Tada, K.2
Nakano, Y.3
-
12
-
-
0029386905
-
1.55 μm InGaAs/InAlAs/InP quantum wells with mass-dependent width for polarization-independent optical modulation
-
A. Hamakawa, K. Ishihara, T. Yamaguchi, Y. Nakano, K. Tada, K. Nishikata, and M. Irikawa, "1.55 μm InGaAs/InAlAs/InP quantum wells with mass-dependent width for polarization-independent optical modulation," Jpn. J. Appl. Phys., vol. 34, pp. L 1280-L 1282, 1995.
-
(1995)
Jpn. J. Appl. Phys.
, vol.34
-
-
Hamakawa, A.1
Ishihara, K.2
Yamaguchi, T.3
Nakano, Y.4
Tada, K.5
Nishikata, K.6
Irikawa, M.7
-
13
-
-
0030190575
-
Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology
-
July
-
R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, "Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology," IEEE Photon. Technol. Lett., vol. 8, pp. 891-893, July 1996.
-
(1996)
IEEE Photon. Technol. Lett.
, vol.8
, pp. 891-893
-
-
Weinmann, R.1
Baums, D.2
Cebulla, U.3
Haisch, H.4
Kaiser, D.5
Kuhn, E.6
Lach, E.7
Satzke, K.8
Weber, J.9
Wiedemann, P.10
Zielinski, E.11
|