SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 416-419

Argon plasma sputter etching induced defect levels in strained, epitaxial p-type Si-Ge alloys

(4) Mamor, M a Auret, F D a Goodman, S A a Malherbe, J B a

a UNIVERSITY OF PRETORIA (South Africa)

Author keywords

Argon plasma etching; Deep level transient spectroscopy; Defect engineering; Schottky diodes; Si Ge

Indexed keywords

ALPHA PARTICLES; BAND STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRON BEAMS; EPITAXIAL GROWTH; IRRADIATION; METALLIC FILMS; PLASMA ETCHING; SCHOTTKY BARRIER DIODES; SILICON ALLOYS; SPUTTER DEPOSITION;

ELECTRON BEAM DEPOSITION; INTERSTITIAL PAIRS;

THIN FILMS;

EID: 0032628515 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01722-2 Document Type: Article

Times cited : (5)

References (16)

1
- 0024752976
- S.S. Iyer, G.L. Patton, J.M. Stork, B.S. Meyerson, D.L. Harame, IEEE Trans. Electron Devices. 36 (1989) 2043.
- (1989) IEEE Trans. Electron Devices. , vol.36 , pp. 2043
- Iyer, S.S.¹ Patton, G.L.² Stork, J.M.³ Meyerson, B.S.⁴ Harame, D.L.⁵

2
- 0016872072
- F.H. Mullins, A. Brunnschweiler, Solid State Electron. 19 (1976) 47.
- (1976) Solid State Electron. , vol.19 , pp. 47
- Mullins, F.H.¹ Brunnschweiler, A.²

3
- 0025558052
- S.J. Pearton, W.S. Hobson, U.K. Chakrabarti, G.E. DerkitsJr., A.P. Kinsella, J. Electrochem. Soc. 137 (1990) 3892.
- (1990) J. Electrochem. Soc. , vol.137 , pp. 3892
- Pearton, S.J.¹ Hobson, W.S.² Chakrabarti, U.K.³ Derkits Jr., G.E.⁴ Kinsella, A.P.⁵

4
- 0024752046
- G.S. Oehrlein, Mater. Sci. Eng. B 4 (1989) 441.
- (1989) Mater. Sci. Eng. B , vol.4 , pp. 441
- Oehrlein, G.S.¹

5
- 33847530410
- O.O. Awadelkarim, T. Gu, P.I. Mikulan, R.A. Ditizio, S.J. Fonash, KA. Reinhard:, Y.D. Chan, Appl. Phys. Lett. 62 (1993) 958.
- (1993) Appl. Phys. Lett. , vol.62 , pp. 958
- Awadelkarim, O.O.¹ Gu, T.² Mikulan, P.I.³ Ditizio, R.⁴ Fonash, S.J.⁵ Reinhard, K.A.⁶ Chan, Y.D.⁷

6
- 8444225716
- to appear in
- S.A. Goodman, F.D. Auret, M. Mamor, A. Greiner, Appl. Phys. Lett. 73 (7) (1998) to appear in.
- (1998) Appl. Phys. Lett. , vol.73 , Issue.7
- Goodman, S.A.¹ Auret, F.D.² Mamor, M.³ Greiner, A.⁴

7
- 0016081645
- D.V. Lang, J. Appl. Phys. 45 (1974) 3014.
- (1974) J. Appl. Phys. , vol.45 , pp. 3014
- Lang, D.V.¹

8
- 0020765523
- J.R. Troxell, Solid State Electron, 26 (1983) 539.
- (1983) Solid State Electron , vol.26 , pp. 539
- Troxell, J.R.¹

9
- 0001257673
- P.K. Giri, S. Dhar, V.N. Kulkarni, Y.N. Mohapatra, J. Appl. Phys. 81 (1997) 260.
- (1997) J. Appl. Phys. , vol.81 , pp. 260
- Giri, P.K.¹ Dhar, S.² Kulkarni, V.N.³ Mohapatra, Y.N.⁴

10
- 0032473270
- M. Mamor, F.D. Auret, S.A. Goodman, G. Myburg, Appl. Phys. Lett. 72 (1998) 1069.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1069
- Mamor, M.¹ Auret, F.D.² Goodman, S.A.³ Myburg, G.⁴

11
- 0020822279
- B.J. Baliga, A.O. Evwaraye, J. Electrochem. Soc. 30 (1983) 1916.
- (1983) J. Electrochem. Soc. , vol.30 , pp. 1916
- Baliga, B.J.¹ Evwaraye, A.O.²

12
- 0006783209
- R.R. Dombrovskii, Sov. Phys. Semicond. 18 (1984) 371.
- (1984) Sov. Phys. Semicond. , vol.18 , pp. 371
- Dombrovskii, R.R.¹

13
- 35248858533
- C.G. van de Walle, R.M. Martin, Phys. Rev. B 34 (1986) 5621.
- (1986) Phys. Rev. B , vol.34 , pp. 5621
- Van De Walle, C.G.¹ Martin, R.M.²

14
- 0020100249
- Y. Zohta, M.O, Watanabe, J. Appl. Phys. 53 (1982) 1809.
- (1982) J. Appl. Phys. , vol.53 , pp. 1809
- Zohta, Y.¹ Watanabe, M.O.²

15
- 0019036849
- E. Grussel, S. Berg, L.P. Andersson, J. Electrochem. Soc., , 127 1980 p. 1573.
- (1980) J. Electrochem. Soc. , vol.127 , pp. 1573
- Grussel, E.¹ Berg, S.² Andersson, L.P.³

16
- 0028447727
- J. Vanhellemont, A. Kaniava, E. Simoen, et al., IEEE Trans. Nucl. Sci. 41 (1994) 479.
- (1994) IEEE Trans. Nucl. Sci. , vol.41 , pp. 479
- Vanhellemont, J.¹ Kaniava, A.² Simoen, E.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.