Generation lifetime monitoring on high resistivity silicon using gated diodes

Nuclear Inst. and Methods in Physics Research, A

Volumn 288, Issue 1, 1990, Pages 48-53

  Vanstraelen, G ^a   De Backker, K ^a   Debusschere, I ^a   Claeys, C ^a   Declerck, G ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES;

GATED DIODES; ZERBST TECHNIQUE;

RADIATION DETECTORS;

EID: 0025399978     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(90)90462-F     Document Type: Article

References (8)

1. W. Shockley and W.T. Read, Phys. Rev. 87(5) 835.