High-performance devices from surface-conducting thin-film diamond

Carbon

Volumn 37, Issue 5, 1999, Pages 817-822

  Jackman, Richard B ^a   Looi, Hui Jin ^a   Pang, Lisa Y S ^a   Whitfield, Michael D ^a   Foord, John S ^b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRONIC PROPERTIES; HYDROGEN; LEAKAGE CURRENTS; MESFET DEVICES; POLYCRYSTALLINE MATERIALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING DIAMONDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SYNTHETIC DIAMONDS; THIN FILMS;

IDEALITY FACTOR; RECTIFICATION RATIO; SURFACE CONDUCTING THIN FILM DIAMONDS;

DIAMOND FILMS;

EID: 0032627720     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0008-6223(98)00277-2     Document Type: Article

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