Contribution of H+ ion etching during the initial deposition stage to the orientation grade of diamond films

Thin Solid Films

Volumn 348, Issue 1, 1999, Pages 84-89

  Zhang, W J ^a   Jiang, X ^a  

^a FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; FILM GROWTH; GRAIN SIZE AND SHAPE; HYDROGEN; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY;

BIAS VOLTAGE; ORIENTATION GRADE; SELECTIVE ETCHING;

DIAMOND FILMS;

EID: 0032625602     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00021-8     Document Type: Article

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