Conductivity of thin nanocrystalline silicon films

Semiconductors

Volumn 33, Issue 1, 1999, Pages 66-68

  Golubev, V G ^a   Morozova, L E ^a   Pevtsov, A B ^a   Feoktistov, N A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032623206     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187635     Document Type: Article

References (11)

1. Amorphous Semiconductors and Devices Based on Them, edited by I. Khamakavi [Metallurgiya, Moscow, 1986].
2. N. I. Ivanova, N. A. Feoktistov, A. N. Chaika, A. P. Onokhov, and A. B. Pevtsov, Mol. Cryst. Liq. Cryst. 282, 315 (1996).
3. G. Y. Hu, R. F. O'Connel, Y. L. He, and M. B. Yu, J. Appl. Phys. 78, 3945 (1995).
4. T. Hamasaki, H. Kurata, M. Hirose, and Y. Osaka, Appl. Phys. Lett. 37, 1084 (1980).
5. X. Liu, S. Tong, L. Wang, G. Chen, and X. Bao, J. Appl. Phys. 78, 6143 (1995).
6. A. B. Pevtsov, V. Yu. Davydov, N. A. Feoktistov, and V. G. Karpov, Phys. Rev. B 52, 955 (1995).
7. V. G. Golubev, V. Yu. Davydov, A. V. Medvedev, A. B. Pevtsov, and N. A. Feoktistov, Fiz. Tverd. Tela (St. Petersburg) 39, 1348 (1997) [Phys. Solid State 39, 1197 (1997)].
8. V. G. Golubev, V. Yu. Davydov, A. V. Medvedev, A. B. Pevtsov, and N. A. Feoktistov, Fiz. Tverd. Tela (St. Petersburg) 39, 1348 (1997) [Phys. Solid State 39, 1197 (1997)].
9. R. Tsu, J. Gonsalez-Hernandez, S. S. Chao, S. C. Lee, and K. Tanaka, Appl. Phys. Lett. 40, 534 (1982).
10. J. M. Ziman, Models of Disorder: The Theoretical Physics of Homogeneously Disordered Systems (Cambridge Univ. Press, Cambridge, 1979; Mir, Moscow, 1982).
11. V. I. Shklovskiǐ and A. L. Efros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979), Ch. 9, p. 276 (Springer-Verlag, New York, 1984).