Raman scattering spectra and electrical conductivity of thin silicon films with a mixed amorphous-nanocrystalline phase composition: Determination of the nanocrystalline volume fraction

Physics of the Solid State

Volumn 39, Issue 8, 1997, Pages 1197-1201

  Golubev, V G ^a   Davydov, V Yu ^a   Medvedev, A V ^a   Pevtsov, A B ^a   Feoktistov, N A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031523812     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1130042     Document Type: Article

References (19)

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. S. Tong, X. Liu, L. Wang, F. Yan, and X. Bao, Appl. Phys. Lett. 69, 596 (1996).
3. X. Liu, S. Tong, L. Wang, G. Chen, and X. Bao, J. Appl. Phys. 78, 6193 (1995).
4. Y. He, C. Yin, G. Cheng, L. Wang, X. Liu, and G. Y. Hu, J. Appl. Phys. 75, 797 (1994).
5. M. Cardona, in Light Scattering in Solids II, edited by M. Cardona and M. Güntherodt, Springer, Berlin (1982); Mir, Moscow (1984).
6. R. Tsu, J. Gonzalez-Hernandez, S. S. Chao, S. C. Lee, and K. Tanaka, Appl. Phys. Lett. 40, 534 (1982).
7. E. Bustarret, M. A. Hachicha, and M. Brunel, Appl. Phys. Lett. 52, 1675 (1988).
8. T. Hamasaki, H. Kurata, M. Hirose, and Y. Osaka, Appl. Phys. Lett. 37, 1084 (1980).
9. C. C. Tsai, in Amorphous Silicon and Related Materials, edited by H. Fritzsche, World Scientific, Singapore (1988).
10. A. B. Pevtsov, V. Yu. Davydov, N. A. Feoktistov, and V. G. Karpov, Phys. Rev. B 52, 955 (1995).
11. A. T. Voutsas, M. K. Hatalis, J. Boyce, and A. Chiang, J. Appl. Phys. 78, 6999 (1995).
12. H. Richter, Z. P. Wang, and L. Ley, Solid State Commun. 39, 625 (1981).
13. I. H. Campbell and P. M. Fauchet, Solid State Commun. 58, 739 (1986).
14. J. D. Joannopoulos and G. Lucovsky, editors, The Physics of Hydrogenated Amorphous Silicon, Springer Verlag, Berlin (1984); Mir, Moscow (1987).
15. V. K. S. Shante and S. Kirkpatrick, Adv. Phys. 20, 325 (1971).
16. D. J. Thouless, Phys. Rep. C 13, 95 (1974).
17. J. Essam, Rep. Prog. Phys. 43, 833 (1980).
18. B. I. Shklovskiǐ and A. L. Efros, Electronic Properties of Doped Semiconductors [in Russian], Nauka, Moscow (1979); Springer, Berlin (1984).
19. A. Bunde and S. Havlin, in Percolation in Fractals and Disordered Systems, edited by A. Bunde and S. Havlin, Springer, Berlin (1987).