Threshold stress behavior in thin film electromigration

Journal of Applied Physics

Volumn 85, Issue 12, 1999, Pages 8145-8154

  Surh, Michael P ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILMS; CRYSTAL MICROSTRUCTURE; GRAIN BOUNDARIES; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; PLASTIC DEFORMATION; POINT DEFECTS; STRAIN; STRESS ANALYSIS; STRESS CONCENTRATION; TEXTURES; THIN FILMS;

INTEGRATED CIRCUIT INTERCONNECTS; VACANCIES;

ELECTROMIGRATION;

EID: 0032622015     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370653     Document Type: Article

References (37)

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29. 3/s in Fig. 8.6; F. M. d'Heurle and P. S. Ho, Thin Films - Interdiffusion and Reactions, edited by J. M. Poate, K. N. Tu, and J. W. Mayer (Wiley, New York, 1978), and Z* = -10. The vacancy relaxation volume, fΩ, is 0.3Ω (see Ref. 11; vacancy concentrations are taken from Ref. 23 of T. Hehenkamp, J. Phys. Chem. Solids 55, 907 (1994). The film thickness and grain sizes are 100 nm, and the resistivity is 3.3 μΩ cm (see Ref. 4).
30. 3/s in Fig. 8.6; F. M. d'Heurle and P. S. Ho, Thin Films - Interdiffusion and Reactions, edited by J. M. Poate, K. N. Tu, and J. W. Mayer (Wiley, New York, 1978), and Z* = -10. The vacancy relaxation volume, fΩ, is 0.3Ω (see Ref. 11; vacancy concentrations are taken from Ref. 23 of T. Hehenkamp, J. Phys. Chem. Solids 55, 907 (1994). The film thickness and grain sizes are 100 nm, and the resistivity is 3.3 μΩ cm (see Ref. 4).
31. 3/s. with Z* = -5.2. A large value of Z* approximately -10 would imply twofold slower grain boundary diffusion and transient decay which gives better agreement for the inhomogeneous stress simulations.
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