Diffusional creep as a stress relaxation mechanism in electromigration

Journal of Applied Physics

Volumn 83, Issue 1, 1998, Pages 100-107

  Glickman, E ^a   Osipov, N ^b   Ivanov, A ^b   Nathan, M ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002434403     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366729     Document Type: Article

References (49)

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