Single-Electron Devices Formed by Self-Ordering Metal Nanodroplet Arrays on Epitaxial CaF2 Film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 418-420

  Kawasaki, Koji ^a   Mochizuki, Marie ^a   Tsutsui, Kazuo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CaF2 step edge; Coulomb gap; Coulomb staircase; Metal droplet; Multitunneling junction; Self ordering; Single electron

Indexed keywords

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; EPITAXIAL GROWTH; FLUORSPAR; GALLIUM; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SILICON WAFERS; TRANSISTORS; TUNNEL JUNCTIONS;

COULOMB GAPS; COULOMB STAIRCASE; SINGLE ELECTRON DEVICES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032621846     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.418     Document Type: Article

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