Simple parameter extraction method for non-ideal Schottky barrier diodes

Electronics Letters

Volumn 34, Issue 12, 1998, Pages 1268-1269

  Lee, J I ^a,c   Brini, J ^a   Dimitriadis, C A ^b  

^a Grenoble INP Phelma   (France)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; LEAKAGE CURRENTS;

PARAMETER EXTRACTION METHODS;

SCHOTTKY BARRIER DIODES;

EID: 0032095866     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980831     Document Type: Article

References (5)

1. NORDE, H.: 'A modified forward I-V plot for Schottky diodes with high series resistance', J. Appl. Phys., 1979, 50, (7), pp. 5052-5053
2. LIEN, C.-D., SO, F.C.T., and NICOLET, M.-A.: 'An improved forward I-V method for nonideal Schottky diodes with high series resistance', IEEE Trans. Electron Devices, 1984, ED-31, (10), pp. 1052-1053
3. DONOVAL, D., DE SOUSA PIRES, J., TOVED, P.A., and HARMAN, R.: 'A self consistent approach to IV-measurements on rectifying metal-semiconductor contacts', Solid-State Electron., 1989, 32, (12), pp. 961-964
4. DIMITRIADIS, C.A., LOGOTHETIDIS, S., and ALEXANDROU, I.: 'Schottky barrier contacts of titanium nitride on n-type silicon', Appl. Phys. Lett., 1995, 66, (4), pp. 502-504
5. DARLING, R.B.: 'Current-voltage characteristics of Schottky barrier diodes with dynamic interfacial defect state occupancy', IEEE Trans. Electron Devices, 1996, ED-43, (7), pp. 1153-1160