SCOPUS 정보 검색 플랫폼

Volumn 145, Issue 6, 1998, Pages 2095-2100

Structural investigation of the bias-enhanced nucleation and growth of diamond films by microwave plasma chemical vapor deposition

(3) Kim, Do Geun a,b Seong, Tae Yeon a Baik, Young Joon b

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Korea Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; DENSITY (SPECIFIC GRAVITY); EPITAXIAL GROWTH; FILM GROWTH; METHANE; NUCLEATION; PLASMA APPLICATIONS; SILICON; SILICON CARBIDE;

BIAS ENHANCED NUCLEATION (BEN); MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION;

DIAMOND FILMS;

EID: 0032099066 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1838602 Document Type: Article

Times cited : (8)

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