Crystalline quality of highly oriented diamond films grown on 〈100〈 silicon studied by conventional TEM

Diamond and Related Materials

Volumn 6, Issue 1, 1997, Pages 41-47

  Bozzolo, N ^a   Barrat, S ^a   Dieguez, I ^a   Bauer Grosse, E ^a  

^a INSTITUT JEAN LAMOUR   (France)

Author keywords

Conventional TEM; Crystalline quality; Silicon; Structural defects

Indexed keywords

EID: 0005829728     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(96)00701-7     Document Type: Article

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