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Volumn 74, Issue 14, 1999, Pages 1990-1992

Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III-V semiconducting overhanging beams

(5) Fierling, G a Letartre, X a Viktorovitch, P a Laine J P b Priester, C c

a ECOLE CENTRALE DE LYON (France)

b LABORATOIRE DE TRIBOLOGIE ET DYNAMIQUE DES SYSTÈMES (France)

c INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; COMPUTER SOFTWARE; ELASTICITY; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; PIEZOELECTRICITY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SHEAR DEFORMATION;

ELECTRONIC CONFINEMENT; SOFTWARE PACKAGE ANSYS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032615488 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123723 Document Type: Article

Times cited : (8)

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