Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties

Applied Physics Letters

Volumn 71, Issue 11, 1997, Pages 1516-1518

  Fierling, G ^a   Buchheit, M ^a   Letartre, X ^a   Gendry, M ^a   Viktorovitch, P ^a   Sidoroff, F ^b   Laine J P ^b  

^a ECOLE CENTRALE DE LYON   (France)

^b LABORATOIRE DE TRIBOLOGIE ET DYNAMIQUE DES SYSTÈMES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANELASTIC RELAXATION; BAND STRUCTURE; CALCULATIONS; COMPUTER SIMULATION; ELECTRONIC STRUCTURE; LATTICE CONSTANTS; MATHEMATICAL MODELS; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS;

PHOTOLUMINESCENCE MEASUREMENTS; SCHRODINGER EQUATION; SPECTRAL SCANNING PHOTOLUMINESCENCE;

OPTOELECTRONIC DEVICES;

EID: 0031572035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119953     Document Type: Article

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