Structural and optical characterization of InP/GaInP islands grown by solid-source MBE

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 395-400

  Kurtenbach, A ^a   Ulrich, C ^a   Jin Phillipp, N Y ^b   Noll, F ^a   Eberl, K ^a   Syassen, K ^a   Phillipp, F ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

Atomic force microscopy (AFM); InP GaInP; Photoluminescence (PL); Photoreflectance (PR); Quantum dots; Reflection high energy electron diffraction (RHEED); Self assembled dots; Solid source molecular beam epitaxy (MBE); Transmission electron microscopy (TEM)

Indexed keywords

EID: 0043117106     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666609     Document Type: Article

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