Temperature dependence of InGaAs/GaAs quantum well microcavity light-emitting diodes

Applied Physics Letters

Volumn 74, Issue 24, 1999, Pages 3598-3600

  Takamori, T ^a   Pratt, A R ^a   Kamijoh, T ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LIGHT EMISSION; MIRRORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

DISTRIBUTED BRAGG REFLECTORS (DBR); SEMICONDUCTOR MICROCAVITY;

LIGHT EMITTING DIODES;

EID: 0032615110     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123193     Document Type: Article

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