Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 477-479

  Matsumoto, Kazuhiko ^a   Gotoh, Yoshitaka ^a   Maeda, Tatsuro ^a   Dagata, John A ^b   Harris, James S ^c  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

AFM; Coulomb oscillation; Nano oxidation process; Single electron transistor

Indexed keywords

ATOMIC FORCE MICROSCOPY; OXIDATION; SCANNING; SEMICONDUCTOR DEVICE MANUFACTURE;

COULOMB OSCILLATION; NANO-OXIDATION PROCESSES; SINGLE ELECTRON TRANSISTORS (SET);

TRANSISTORS;

EID: 0032614745     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.477     Document Type: Article

References (7)

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2. K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian and J. S. Harris, Appl. Pys. Lett. 68 (1996) 34.
3. K. Matsumoto, M. Ishii, J. Shirakashi, K. Segawa, Y. Oka, B. J. Vartanian and J. S. Hariss: Tech. Dig. Int. Electron Device Meet. (1995) p. 363.
4. K. Matsumoto, Y. Gotoh, J. Shirakashi, T. Maeda and J. S. Hariss: Tech. Dig. Int. Electron Device Meet. (1997) p. 155.
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6. J. Dagata, T. Inoue and H. Yokoyama: to be published in Appl. Phys. Lett.
7. J. Dagata, T. Inoue, J. Itoh, K. Matsumoto and H. Yokoyama: Ext. Abstr. Micro-process and Nano Conf. 1998, p. 277.