Fabrication of single electron memory on atomically flat α-Al2O3 substrate made by AFM nano-oxidation process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 155-158

  Matsumoto, Kazuhiko ^a   Gotoh, Yoshitaka ^a   Shirakashi, Jun ichi ^a   Maeda, Tatsuro ^a   Harris, James S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SINGLE ELECTRON MEMORY;

ATOMIC FORCE MICROSCOPY; CATHODES; ELECTRON TUNNELING; NIOBIUM; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSISTORS; TUNNEL JUNCTIONS;

DATA STORAGE EQUIPMENT;

EID: 84886448139     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)