Tuning of ZnSe-GaAs band discontinuities in heterojunction diodes

Applied Physics Letters

Volumn 69, Issue 21, 1996, Pages 3233-3235

  Pellegrini, Vittorio ^a   Börger, Marco ^a   Lazzeri, Michele ^a   Beltram, Fabio ^a   Paggel, Jens J ^b,c,e   Sorba, Lucia ^b,c,f   Rubini, Silvia ^b,c   Lazzarino, Marco ^b,c   Franciosi, Alfonso ^b,c,g   Bonard, Jean Marc ^d   Ganiére, Jean Daniel ^d  

^a INFM   (Italy)

^b LABORATORIO TASC   (Italy)

^c University of Minnesota   (United States)

^d EPFL   (Switzerland)

^e MAX PLANCK INSTITUT FÜR KERNPHYSIK   (Germany)

^f Istituto ICMAT del CNR   (Italy)

^g UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; ENERGY GAP; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

COMPOSITION CONTROL INTERFACE LAYER; CONDUCTION BAND OFFSET; HETEROJUNCTION DIODES; ZINC SELENIDE;

HETEROJUNCTIONS;

EID: 0030289895     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118020     Document Type: Article

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