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Journal of Alloys and Compounds

Volumn 286, Issue 1-2, 1999, Pages 343-348

Interference fringes in plane-wave topography of AlxGa1-xAs epitaxial layers implanted with Se ions

(4) Wierzchowski, W a Wieteska, K b Graeff, W c Turos, A a

a ukasiewicz Research Network Institute of Microelectronics and Photonics (Poland)

b INSTITUTE OF ATOMIC ENERGY (Poland)

c DESY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ION IMPLANTATION; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SELENIUM; SYNCHROTRON RADIATION;

ALUMINUM GALLIUM ARSENIDE; INTERFERENCE FRINGES; X RAY INTERFERENCE PHENOMENA;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032607235 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-8388(98)01036-6 Document Type: Article

Times cited : (4)

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