A DLTS study of the evolution of oxygen precipitates in Si at high temperature and high pressure

Semiconductors

Volumn 30, Issue 8, 1996, Pages 760-764

  Antonova, I V ^a   Popov, V P ^a   Fedina, L I ^a   Shaimeev S S ^a   Misiuk, A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040201335     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

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