Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 308-311

  Arps, M ^a   Bach, H G ^a   Passenberg, W ^a   Umbach, A ^a   Schlaak, W ^a  

^a FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; FERMI LEVEL; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; SURFACE PROPERTIES;

CHANNEL RESISTIVITY; SURFACE FERMI LEVEL; SURFACE PASSIVATION; VAN DER PAUW STRUCTURES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029706027     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)