Hydrogenation and annealing effects on the trapping times of the minority carriers in In-doped CdTe epitaxial layers grown on p-CdTe (211) substrates

Journal of Applied Physics

Volumn 86, Issue 2, 1999, Pages 859-862

  Yuldashev, Sh U ^a,c   Bolotin, I L ^a,d   Hou, Y B ^a   Leem, J H ^a   Jeon, H C ^a   Kang, T W ^a   Kim, T W ^b  

^a Dongguk University   (South Korea)

^b Kwangwoon University   (South Korea)

^c S YU YUNUSOV INSTITUTE OF THE CHEMISTRY OF PLANT SUBSTANCES   (Uzbekistan)

^d INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; ELECTRON TRANSITIONS; ELECTRON TRAPS; HOLE TRAPS; HYDROGENATION; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING;

MINORITY CARRIER TRAPPING;

SEMICONDUCTING FILMS;

EID: 0032606465     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370815     Document Type: Article

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