Deep levels in in-doped CdTe epitaxial films grown on p-CdTe substrates

Applied Surface Science

Volumn 119, Issue 3-4, 1997, Pages 219-223

  Han, M S ^a   Song, B K ^a   Hou, Y B ^a   Kang, T W ^a   Kim, T W ^b  

^a Dongguk University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; FILM GROWTH; INDIUM; MOLECULAR BEAM EPITAXY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

CADMIUM TELLURIDE; ELECTRON DEEP TRAPS;

SEMICONDUCTING FILMS;

EID: 0031249389     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00211-0     Document Type: Article

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