Role of implantation-induced defects on the response time of semiconductor saturable absorbers

Applied Physics Letters

Volumn 75, Issue 10, 1999, Pages 1437-1439

  Tan, H H ^a   Jagadish, C ^a   Lederer, M J ^a   Luther Davies, B ^a   Zou, J ^b   Cockayne, D J H ^b   Haiml, M ^c   Siegner, U ^c   Keller, U ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; AMORPHIZATION; ANNEALING; ARSENIC; CRYSTAL DEFECTS; CRYSTALLIZATION; ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); DISTRIBUTED BRAGG REFLECTORS (DBR); RUTHERFORD BACKSCATTERING-CHANNELING (RBS-C) TECHNIQUES; SEMICONDUCTOR SATURABLE ABSORBERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032606274     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124718     Document Type: Article

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