Extension mechanism of antiphase-boundaries in CuPt B-type ordered GaInP2 and (Al,Ga)InP2 epitaxial layers

Journal of Crystal Growth

Volumn 205, Issue 1, 1999, Pages 11-19

  Takeda, S ^a   Kuno, Y ^a   Hosoi, N ^b   Shimoyama, K ^b  

^a OSAKA UNIVERSITY   (Japan)

^b MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COPPER ALLOYS; CRYSTAL ATOMIC STRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM INDIUM PHOSPHIDES; ANTIPHASE BOUNDARIES; COPPER PLATINUM ALLOYS; GALLIUM INDIUM PHOSPHIDES; ORDERED STRUCTURES; STEP FLOW GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032598220     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00230-4     Document Type: Article

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