Growing improved silicon crystals for VLSI/ULSI applications

Solid State Technology

Volumn 39, Issue 11, 1996, Pages 70-80

  Kim, Kyong Min ^a,b,c,d,e,f  

^a MEMC Electronic Materials Inc   (United States)

^b Seoul National University   (South Korea)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^d MEMC ^*

^e IBM   (United States)

^f AMERICAN PHYSICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY OF SOLIDS; HEAT TRANSFER; HYDRODYNAMICS; MOLTEN MATERIALS; OXYGEN; POINT DEFECTS; SEMICONDUCTOR GROWTH; STACKING FAULTS; ULSI CIRCUITS; VLSI CIRCUITS;

GROWN-IN DEFECTS;

SILICON WAFERS;

EID: 0030274486     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

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