Elastic and inelastic single electron tunneling in coupled two dot system

Microelectronic Engineering

Volumn 47, Issue 1, 1999, Pages 101-105

  Tarucha, Seigo ^a,b   Fujisawa, T ^b   Ono, K ^a   Austing, D G ^b   Oosterkamp, T H ^c   Van der Wiel, W G ^c   Kouwenhoven, L P ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC WAVES; ELECTRON TUNNELING; PHONONS; PHOTONS; QUANTUM EFFICIENCY; TEMPERATURE; TRANSISTORS;

ACOUSTIC PHONON EMISSION; ELASTIC TUNNELING; INELASTIC TUNNELING; LATERALLY COUPLED TWO DOT DEVICE; SINGLE ELECTRON TRANSISTORS; TEMPERATURE DEPENDENCE; TUNNEL COUPLING; VERTICALLY COUPLED TWO DOT DEVICE; ZERO DIMENSIONAL STATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032594709     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00162-8     Document Type: Article

References (7)

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