Low-temperature chemical-vapor-deposition of silicon-nitride film from hexachloro-disilane and hydrazine

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1509-1512

  Yeh, Wen Chang ^a   Ishihara, Ryoichi ^a   Morishita, Shunsuke ^a   Matsumura, Masakiyo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Amorphous silicon; Chemical vapor deposition; Hexachloro disilane; Hydrazine; Silicon nitride; Thin film transistors

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHARGE TRANSFER; CURRENT DENSITY; ELECTRIC BREAKDOWN; HYDRAZINE; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; REFRACTIVE INDEX; SILICON NITRIDE; THIN FILM TRANSISTORS; THIN FILMS;

ATOMIC RATIO; BREAKDOWN FIELD STRENGTH; ELECTROSTATIC DIPOLE MOMENTS; ELECTROSTATIC FORCE; HEXACHLORO DISILANE;

CHEMICAL VAPOR DEPOSITION;

EID: 0030079671     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1509     Document Type: Article

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