Remote plasma enhanced chemical vapor deposition of silicon films at low temperatures from Si2H6-H2-SiF4

Journal of the Electrochemical Society

Volumn 143, Issue 8, 1996, Pages 2640-2645

  Kim, Dong Hwan ^a   Park, Young Bae ^a   Lee, Il Jeong ^a   Rhee, Shi Woo ^a,b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; COMPOSITION; CRYSTALLINE MATERIALS; CRYSTALLIZATION; FLUORINE; HYDROGEN; LOW TEMPERATURE OPERATIONS; OXYGEN; PLASMA APPLICATIONS; SILICON COMPOUNDS; SURFACE ROUGHNESS;

CRYSTALLINITY; DEPOSITION TEMPERATURE; FLUORINE CHEMISTRY; PARTICLE FORMATION; PLASMA POWER; REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON DANGLING BOND; SILICON FLUORIDE;

SEMICONDUCTING FILMS;

EID: 0030214097     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837062     Document Type: Article

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