Noncrucial role of the defects in the splitting for hydrogen implanted silicon with high boron concentration

Materials Research Society Symposium - Proceedings

Volumn 540, Issue , 1999, Pages 109-114

  Popov, V P ^a   Stas, V F ^a   Antonova, I V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; HYDROGEN; ION IMPLANTATION; MATHEMATICAL MODELS; PRESSURE; STRAIN; STRESSES;

BLISTERING; GAS PRESSURE MODEL; SPLITTING; STRUCTURAL PROPERTIES;

SILICON WAFERS;

EID: 0032592214     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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