SCOPUS 정보 검색 플랫폼

Volumn 80-81, Issue PART 2, 1993, Pages 889-894

Ion implantation effects in silicon carbide

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5844241724 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/0168-583X(93)90703-9 Document Type: Article

Times cited : (179)

References (23)

1
- 84914056365
- R.C. Marshall, J.W. Faust Jr., C.E. Ryan, Univ. of South Carolina Press, Columbia, SC
- (1973) Proc. 3rd Int. Conf. on Silicon Carbide , pp. 471
- Marsh¹

3
- 0002881551
- R.A. Johnson, A.N. Orlov, North-Holland, New York
- (1986) Radiation Effects in Crystals , pp. 387
- Clinard¹ Hobbs²

4
- 33750798990
- Structural alterations in SiC as a result of Cr+ and N+ implantation
- (1983) Nuclear Instruments and Methods in Physics Research , vol.209-210 , pp. 317
- Williams¹ McHargue² Appleton³

7
- 84936506097
- Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphization
- (1988) Journal of Materials Research , vol.3 , pp. 321
- Edmonds¹ Davis² Withrow³ More⁴

9
- 0015082899
- Disorder produced in SiC by ion bombardment
- (1971) Radiation Effects , vol.9 , pp. 261
- Hart¹ Dunlap² Marsh³

13
- 0009429140
- G.S. Was, L.E. Rehn, D.M. Follstaedt, Mater. Res. Soc, Pittsburgh
- (1993) Phase Formation and Modification by Beam-Solid Interactions , pp. 363
- Bentley¹ Romana² Horton³ McHargue⁴

15
- 84936489300
- Recrystallization of ion-implanted α-SiC
- (1987) Journal of Materials Research , vol.2 , pp. 107
- Bohn¹ Williams² McHargue³ Begun⁴

16
- 0003750648
- J.W. Mayer, E. Rimini, Academic Press, New York
- (1977) Ion Beam Handbook for Material Analysis , pp. 80
- Appleton¹ Foti²

17
- 84914056361
- G.W. Bailey, San Francisco Press, San Francisco, CA
- (1984) Proc. 42nd Annual Mtg. Electron Micro. Soc. America , pp. 123
- Sklad¹ Angelini² McHargue³ Williams⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.