Formation and luminescent properties of oxidized porous silicon doped with erbium by electrochemical procedure

Materials Research Society Symposium - Proceedings

Volumn 536, Issue , 1999, Pages 69-74

  Bondarenko, V ^a,b   Vorozov, N ^a,b   Dolgyi, L ^a,b  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b University of Rochester   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM; HIGH TEMPERATURE TESTING; INTEGRATED OPTOELECTRONICS; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTOR DOPING; THERMOOXIDATION;

CATHODIC POLARIZATION; CROSS RELAXATION INTERACTIONS; OXIDIZED POROUS SILICON; PHOTOLUMINESCENCE EXCITATION SPECTRA;

POROUS SILICON;

EID: 0032591614     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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