Magnetic domain dependent quantum transport through a ferromagnetic dot embedded in a semiconductor quantum wire

Physical Review Letters

Volumn 81, Issue 24, 1998, Pages 5422-5425

  Yamada, Syoji ^a   Kikutani, Tomoyuki ^a   Aoki, Nobuyuki ^a   Hori, Hidenobu ^a   Tatara, Gen ^b  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSPORT PROPERTIES; FERROMAGNETIC MATERIALS; HIGH ELECTRON MOBILITY TRANSISTORS; MAGNETIC DOMAINS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

COULOMB GAP; COULOMB OSCILLATIONS; FERROMAGNETIC DOT; MAGNETIC FORCE MICROSCOPY; QUANTUM TRANSPORT;

QUANTUM THEORY;

EID: 0032517720     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.5422     Document Type: Article

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