Fabrication of buried metal dot structure in split-gate wire by scanning tunneling microscope

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. B, 1996, Pages 3738-3742

  Aoki, Nobuyuki ^a   Fukuhara, Keizo ^a   Kikutani, Tomoyuki ^a   Oki, Akio ^a   Hori, Hidenobu ^a   Yamada, Syoji ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

2DEG; Field evaporation; Ni dot; Split gate wire; STM; Surface modification

Indexed keywords

ELECTRODES; EVAPORATION; NICKEL; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SURFACE TREATMENT; TUNGSTEN; VACUUM APPLICATIONS;

BURIED METAL DOT STRUCTURE; ELECTRICAL EVAPORATION; SPLIT GATE ELECTRODES; SPLIT GATE WIRE; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030171314     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3738     Document Type: Article

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