MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 383-389

  Mawst, L J ^a   Bhattacharya, A ^a   Nesnidal, M ^a   Lopez, J ^a   Botez, D ^a   Syrbu, A V ^b   Yakovlev, V P ^b   Suruceanu, G I ^b   Mereutza, A Z ^b   Jansen, M ^c   Nabiev, R F ^c  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^c Coherent Corp ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

DIODE LASERS; DOUBLE QUANTUM WELL LASERS;

QUANTUM WELL LASERS;

EID: 0030672756     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00513-1     Document Type: Article

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