Absolute determination of the layer-perpendicular band structure of VSe2 and TiS2 by combined very-low-energy electron diffraction and photoemission

Journal of Physics Condensed Matter

Volumn 10, Issue 26, 1998, Pages 5749-5766

  Strocov, V N ^a,c   Starnberg, H I ^a   Nilsson, P O ^a   Brauer, H E ^a   Holleboom, L J ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

^c Inst High Perf Computations D   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; BINDING ENERGY; DIFFUSION; ELECTRONS; GROUND STATE; LOW ENERGY ELECTRON DIFFRACTION; MAPPING; PHOTOEMISSION; TITANIUM COMPOUNDS; VANADIUM COMPOUNDS;

LOWER OCCUPIED BAND; TRANSITION METAL DICHALCOGENIDE; UPPER BAND; VERY LOW ENERGY ELECTRON DIFFRACTION;

FILMS;

EID: 0032490478     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/10/26/004     Document Type: Article

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