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Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 490-494

InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth

(6) Velling, P a Fix, W b Geisselbrecht W b Prost, W a Dohler G H b Tegude, F J a

a UNIVERSITY OF DUISBURG ESSEN (Germany)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

GaAs; InGaP; MBE; MOVPE; Nipi structure; Shadow mask

Indexed keywords

INTEGRATED OPTOELECTRONICS; LITHOGRAPHY; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; PHOTOCONDUCTING DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

EPITAXIAL SHADOW MASKS; INDIUM GALLIUM PHOSPHIDE;

SEMICONDUCTOR GROWTH;

EID: 0032477232 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00696-4 Document Type: Article

Times cited : (3)

References (7)

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