The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 287-291

  Lindner, A ^a   Velling, P ^a   Prost, W ^a   Wiersch, A ^a   Kuphal, E ^b   Burchard, A ^c,d   Magerle, R ^c,d   Deicher, M ^c,d   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b DEUTSCHE TELEKOM LABORATORIES   (Germany)

^c UNIVERSITY OF KONSTANZ   (Germany)

^d CERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HETEROJUNCTION BIPOLAR TRANSISTORS; HYDROGEN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

PERTURBED ANGULAR CORRELATION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030687705     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00590-8     Document Type: Article

References (7)

1. K. Kurishima, H. Nakajima, T. Kobayashi, Y. Matsuoka and T. Ishibashi, Appl. Phys. Lett. 62 (1993) 2372.
2. T.F. Kuech and J.M. Redwing, J. Crystal Growth 145 (1994) 382.
3. S.A. Stockman, A.W. Hanson and G.E. Stillman, Appl. Phys. Lett. 60 (1992) 2903.
4. M. Deicher and W. Pfeiffer, Mater. Sci. Forum 148/149 (1994) 481.
5. N.I. Buchan, T.F. Kuech, G. Scilla and F. Cardone, J. Crystal Growth 110 (1991) 405.
6. R.C. Weast, Ed., CRC Handbook of Chemistry and Physics (CRC, Cleveland, Ohio, 1977).
7. S.A. Stockman, Thesis, College of Engineering, University of Illinois, Urbana-Champaign (1993).