Selective growth and regrowth of high Al content AlGaAs for use in BH lasers

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 495-502

  Choi, Won Jin ^a   Dapkus, P Daniel ^a  

^a University of Southern California   (United States)

Author keywords

AlAs native oxide; III V semiconductors; MOCVD; Regrowth; Selective area growth; Semiconductor lasers

Indexed keywords

ALUMINUM; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

BURIED HETEROSTRUCTURE (BH) LASERS; SELECTIVE AREA GROWTH; VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL);

SEMICONDUCTOR GROWTH;

EID: 0032477205     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00682-4     Document Type: Article

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