Wavelength shift of selectively oxidized Al xO y-AlGaAs-GaAs distributed bragg reflectors

IEEE Photonics Technology Letters

Volumn 9, Issue 7, 1997, Pages 884-886

  MacDougal, Michael H ^a,b,c   Dapkus, P Daniel ^a,b  

^a IEEE   (United States)

^b University of Southern California ^*  (United States)

^c Gore Photonics   (United States)

Author keywords

Laser; Mirrors; Semiconductor growth; Semiconductor lasers; Semiconductor insulator interface

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INTERFACES (MATERIALS); OPTICAL RESONATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SUBSTRATES; THERMAL EFFECTS; THERMAL STRESS; THERMOOXIDATION;

DISTRIBUTED BRAGG REFLECTORS (DBR); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL); WAVELENGTH SHIFTS;

MIRRORS;

EID: 0031188174     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.593333     Document Type: Article

References (12)

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