Pseudomorphic InGaAs/In(Ga) P bidimensional electron gas grown by chemical beam epitaxy

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 470-475

  Carlin, J F ^a   Rudra, A ^a   Ilegems, M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CRYSTAL STRUCTURE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; HALL EFFECT; OPTIMIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; TEMPERATURE;

CHANNEL GROWTH; INDIUM GALLIUM ARSENIDE; INDIUM GALLIUM PHOSPHIDE; STRAIN COMPENSATION; TWO DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 0030190562     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01062-9     Document Type: Article

References (11)

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