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Volumn 7, Issue 9, 1997, Pages 261-263
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K-Band high-power/efficiency/breakdown GaInAs/InP composite channel HEMT's
a
IEEE
(United States)
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Author keywords
InP; Microwave power FET's; MODFET's; Power semiconductor devices
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Indexed keywords
ELECTRIC BREAKDOWN OF SOLIDS;
FREQUENCY RESPONSE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
TRANSCONDUCTANCE;
COMPOSITE CHANNELS;
POWER ADDED EFFICIENCY (PAE);
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0031233924
PISSN: 10518207
EISSN: None
Source Type: Journal
DOI: 10.1109/75.622531 Document Type: Article |
Times cited : (6)
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References (9)
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