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Volumn 7, Issue 9, 1997, Pages 261-263

K-Band high-power/efficiency/breakdown GaInAs/InP composite channel HEMT's

Author keywords

InP; Microwave power FET's; MODFET's; Power semiconductor devices

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; FREQUENCY RESPONSE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

EID: 0031233924     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.622531     Document Type: Article
Times cited : (6)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.