Al-Ga-In-nitride heterostructures: MOVPE growth in production reactors and characterization

Journal of Electronic Materials

Volumn 26, Issue 10, 1997, Pages 1123-1126

  Beccard, R ^a   Schoen, O ^a   Wachtendorf, B ^a   Schmitz, D ^a   Juergensen, H ^a   Woelk, E ^a  

^a AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH;

BLUE EMITTERS;

HETEROJUNCTIONS;

EID: 0031257335     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0006-y     Document Type: Article

References (0)