X-ray diffraction analysis of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 81, Issue 6, 1997, Pages 2607-2610

  Nittono, Takumi ^a   Hyuga, Fumiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000779342     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364297     Document Type: Article

References (22)

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