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Volumn 146, Issue 1-4, 1998, Pages 362-366

Excitonic model of track registration of energetic heavy ions in insulators

Author keywords

Amorphisation; Defect cluster; Electronic excitation; Exciton; Heavy ion track; Radiation effects; Self trapped exciton; Swift heavy ion; Thermal spike

Indexed keywords

ELECTRONIC DENSITY OF STATES; EXCITONS; HEAVY IONS; RADIATION EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0032477068     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00448-0     Document Type: Article
Times cited : (54)

References (25)
  • 15
    • 0346452856 scopus 로고    scopus 로고
    • note
    • Irradiation of a semiconductor with photons above the band-gap energy increases the electron-hole pair concentration gradually, resulting in generation of so-called electron-hole plasma, in which the excitons are separated by more than their Bohr radius. The excitons formed in the path of heavy ions in a short time can be more densely populated. We call the dense excitons generated along ion paths, at a density of excitation nearly equal to the molecular density, exciton cluster, to distinguish it from the electron-hole plasma.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.